Oxide Based Resistive Random Access Memory Device for High Density Non Volatile Memory Applications
| Main Authors: | Z. Fang, X. P. Wang, G. Q. Lo, D. L. Kwong |
|---|---|
| Format: | Article Journal |
| Bahasa: | eng |
| Terbitan: |
, 2013
|
| Online Access: |
https://zenodo.org/record/1335656 |
Daftar Isi:
- In this work, we demonstrated vertical RRAM device fabricated at the sidewall of contact hole structures for possible future 3-D stacking integrations. The fabricated devices exhibit polarity dependent bipolar resistive switching with small operation voltage of less than 1V for both set and reset process. A good retention of memory window ~50 times is maintained after 1000s voltage bias.