Switching Behaviors of TiN/HfOx/Pt Based RRAM
| Main Authors: | B. B. Weng, Z. Fang, Z. X. Chen, X. P. Wang, G. Q. Lo, D. L. Kwong |
|---|---|
| Format: | Article |
| Bahasa: | eng |
| Terbitan: |
, 2013
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| Online Access: |
https://zenodo.org/record/1335632 |
Daftar Isi:
- Resistive Random Access Memory (RRAM) had received great amount of attention from various research efforts in recent years, owing to its promising performance as a next generation memory device. In this paper, samples based on TiN/HfOx/Pt stack were prepared and its electrical switching behaviors were characterized and discussed in brief.