Analysis of a Novel Strained Silicon RF LDMOS
| Main Authors: | V.Fathipour, M. A. Malakootian, S. Fathipour, M. Fathipour |
|---|---|
| Format: | Article |
| Bahasa: | eng |
| Terbitan: |
, 2010
|
| Online Access: |
https://zenodo.org/record/1331733 |
Daftar Isi:
- In this paper we propose a novel RF LDMOS structure which employs a thin strained silicon layer at the top of the channel and the N-Drift region. The strain is induced by a relaxed Si0.8 Ge0.2 layer which is on top of a compositionally graded SiGe buffer. We explain the underlying physics of the device and compare the proposed device with a conventional LDMOS in terms of energy band diagram and carrier concentration. Numerical simulations of the proposed strained silicon laterally diffused MOS using a 2 dimensional device simulator indicate improvements in saturation and linear transconductance, current drivability, cut off frequency and on resistance. These improvements are however accompanied with a suppression in the break down voltage.