Lihat Juga

• Figure 2: The dependencies 2 0 (log !¿3⁄4). The values are normalized at 2 0 max-TOWARD THE PHYSICAL BASIS OF COMPLEX SYSTEMS: DIELECTRIC ANALYSIS OF POROUS SILICON NANOCHANNELS IN THE ELECTRICAL DOUBLE LAYER LENGTH RANGE
  oleh: Ana Ioanid, et al.
  Terbitan: (2010)
• Figure 4: Nyquist diagrams 2 00 (!¿3⁄4) = f(2 0 (!¿3⁄4))T 166-TOWARD THE PHYSICAL BASIS OF COMPLEX SYSTEMS: DIELECTRIC ANALYSIS OF POROUS SILICON NANOCHANNELS IN THE ELECTRICAL DOUBLE LAYER LENGTH RANGE
  oleh: Ana Ioanid, et al.
  Terbitan: (2010)
• Figure 1: EDL structure for p-Si-TOWARD THE PHYSICAL BASIS OF COMPLEX SYSTEMS: DIELECTRIC ANALYSIS OF POROUS SILICON NANOCHANNELS IN THE ELECTRICAL DOUBLE LAYER LENGTH RANGE
  oleh: Ana Ioanid, et al.
  Terbitan: (2010)
• Toward economy in electric power
  oleh: Cyaffet, Peter R.
• Demand and netback values for gas in electrivity
  oleh: Pinto, Neil
  Terbitan: (1989)