Figure 3: The dependencies 2 00 (log !¿3⁄4). The values are normalized at 2 00 max-TOWARD THE PHYSICAL BASIS OF COMPLEX SYSTEMS: DIELECTRIC ANALYSIS OF POROUS SILICON NANOCHANNELS IN THE ELECTRICAL DOUBLE LAYER LENGTH RANGE
| Main Authors: | Ana Ioanid, Radu Mircea Ciuceanu |
|---|---|
| Format: | info Image |
| Bahasa: | eng |
| Terbitan: |
, 2010
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| Subjects: | |
| Online Access: |
https://www.edusoft.ro/brain/index.php/brain/issue/view/12 |
Daftar Isi:
- Fig.3. The conductivity relaxation occurs at lowing frequencies. The form of the 2 00 (!) = f(2 0 (!)) diagrams changes from a vertical line (a), to any deformate semicircles (b, c, d) having the angle to real axe below 1⁄4 2 , Fig.4. This behaviour denotes that the EDL is not an ideally capacitor, but also is not a disipative region, depending both on the EDL thickness and the frequency range of the applied ̄eld [7]. The composition (by thickness) of the EDL determines essentially the dielectric response of the interface system. Compared with experimental results, the dielectric pro ̄le of this higher length scales model, can provides a more complet description of the solvent properties for a given electrode.