Figure 2: The dependencies 2 0 (log !¿3⁄4). The values are normalized at 2 0 max-TOWARD THE PHYSICAL BASIS OF COMPLEX SYSTEMS: DIELECTRIC ANALYSIS OF POROUS SILICON NANOCHANNELS IN THE ELECTRICAL DOUBLE LAYER LENGTH RANGE
Main Authors: | Ana Ioanid, Radu Mircea Ciuceanu |
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Format: | info Image |
Bahasa: | eng |
Terbitan: |
, 2010
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Subjects: | |
Online Access: |
https://www.edusoft.ro/brain/index.php/brain/issue/view/12 |
Daftar Isi:
- The results of the model are shown that the frequency-dependences 2 0 (log(!¿3⁄4)) in Fig.2, 2 00(log(!¿3⁄4)) in Fig.3 and 2 00 (2 0 )T in Fig.4, where 2 0 , 2 00 are the real and imaginary part, respectively, from (7), having the ̧D ̧ ratio as parameter.