Lihat Juga

• Figure 3: The dependencies 2 00 (log !¿3⁄4). The values are normalized at 2 00 max-TOWARD THE PHYSICAL BASIS OF COMPLEX SYSTEMS: DIELECTRIC ANALYSIS OF POROUS SILICON NANOCHANNELS IN THE ELECTRICAL DOUBLE LAYER LENGTH RANGE
  oleh: Ana Ioanid, et al.
  Terbitan: (2010)
• Figure 2: The dependencies 2 0 (log !¿3⁄4). The values are normalized at 2 0 max-TOWARD THE PHYSICAL BASIS OF COMPLEX SYSTEMS: DIELECTRIC ANALYSIS OF POROUS SILICON NANOCHANNELS IN THE ELECTRICAL DOUBLE LAYER LENGTH RANGE
  oleh: Ana Ioanid, et al.
  Terbitan: (2010)
• Figure 4: Nyquist diagrams 2 00 (!¿3⁄4) = f(2 0 (!¿3⁄4))T 166-TOWARD THE PHYSICAL BASIS OF COMPLEX SYSTEMS: DIELECTRIC ANALYSIS OF POROUS SILICON NANOCHANNELS IN THE ELECTRICAL DOUBLE LAYER LENGTH RANGE
  oleh: Ana Ioanid, et al.
  Terbitan: (2010)
• Investigation of dielectric constant of single layer MoS2 in visible light range based on Drude-Lorentz-Gaussian model
  oleh: n.ansari, et al.
  Terbitan: (2015)
• Dielectric Studies of Charge Transfer Interactions between 1 ,2-Dibro-moethane and some Aromatic Hydrocarbons in Liquid State
  oleh: K. C. KALRA, et al.
  Terbitan: (1992)