3D Quantum Numerical Simulation of Horizontal Rectangular Dual Metal Gate\Gate All Around MOSFETs
| Main Authors: | M. Khaouani, A. Guen-Bouazza, B. Bouazza, Z. Kourdi |
|---|---|
| Format: | Article |
| Bahasa: | eng |
| Terbitan: |
, 2014
|
| Subjects: | |
| Online Access: |
https://zenodo.org/record/1096087 |
Daftar Isi:
- The integrity and issues related to electrostatic performance associated with scaling Si MOSFET bulk sub 10nm channel length promotes research in new device architectures such as SOI, double gate and GAA MOSFET. In this paper, we present some novel characteristic of horizontal rectangular gate\gate all around MOSFETs with dual metal of gate we obtained using SILVACO TCAD tools. We will also exhibit some simulation results we obtained relating to the influence of some parameters variation on our structure, that having a direct impact on their threshold voltage and drain current. In addition, our TFET showed reasonable ION/IOFF ratio of (104) and low drain induced barrier lowering (DIBL) of 39 mV/V.