A Simulation Model for the H-gate PDSOI MOSFET
| Main Authors: | Bu Jianhui, Bi Jinshun, Liu Mengxin, Luo Jiajun, Han Zhengsheng |
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| Format: | Article |
| Bahasa: | eng |
| Terbitan: |
, 2012
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| Subjects: | |
| Online Access: |
https://zenodo.org/record/1070445 |
Daftar Isi:
- The floating body effect is a serious problem for the PDSOI MOSFET, and the H-gate layout is frequently used as the body contact to eliminate this effect. Unfortunately, most of the standard commercial SOI MOSFET model is for the device with finger gate, the necessity of the new models for the H-gate device arises. A simulation model for the H-gate PDSOI MOSFET is proposed based on the 0.35μm PDSOI process developed by the Institute of Microelectronics of the Chinese Academy of Sciences (IMECAS), and then the model is well verified by the ring-oscillator.