Stress analysis of anodic bonded wafer after CMP process
| Main Authors: | Sim, Sung-min, Lee, Yeonsu, Kang, Hye-Lim, Hwang, Y.S., Park, C.H., Llamas-Garro, Ignacio, Kim, Jung-Mu |
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| Format: | Proceeding Journal |
| Bahasa: | eng |
| Terbitan: |
, 2017
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| Subjects: | |
| Online Access: |
https://zenodo.org/record/1002109 |
Daftar Isi:
- Recently, the anodic bonding process has become essential for the fabrication of commercialized resonators, accelerometers and pressure sensors because of its high adhesive strength, high hermeticity and high durability at high temperature [1,2]. However after the bonding process, the bonded substrates typically go through various post-processes such as Chemical Mechanical Polishing (CMP), film deposition, Deep Reactive Ion Etching (DRIE), wafer dicing, etc. [2]. Therefore, the stress and deformation caused by the post-processes can lead to the fracture of the anodic bonded wafer, thus stress analysis is necessary to improve post-process stability and production yield. In this paper, we present an analysis of the stress and fracture of a specific model after performing the CMP process.
- Grant numbers : This work has been supported by the AETHER (TEC2014-58341-C4-4-R) project.