Impact of Gouy-Chapman-Stern model on conventional ISFET sensitivity and stability
| Main Authors: | Dinar, Ahmed M.; Universiti Teknikal Malaysia Melaka (UTeM), Zain, AS Mohd; Universiti Teknikal Malaysia Melaka (UTeM), Salehuddin, F.; Universiti Teknikal Malaysia Melaka (UTeM), Abdulhameed, M.K.; Universiti Teknikal Malaysia Melaka (UTeM), Mohsen, Mowafak K.; Universiti Teknikal Malaysia Melaka (UTeM), Attiah, Mothana L.; Universiti Teknikal Malaysia Melaka (UTeM) |
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| Format: | Article info application/pdf eJournal |
| Bahasa: | eng |
| Terbitan: |
Universitas Ahmad Dahlan
, 2019
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| Subjects: | |
| Online Access: |
http://journal.uad.ac.id/index.php/TELKOMNIKA/article/view/12838 http://journal.uad.ac.id/index.php/TELKOMNIKA/article/view/12838/6995 |
Daftar Isi:
- Utilizing Gouy-Chapman-Stern model can improve ISFET sensitivity and stability using Stern layer in direct contact with electrolyte in ISFET sensing window. However, this model remains a challenge in mathematical way, unless it’s re-applied using accurate simulation approaches. Here, we developed an approach using a commercial Silvaco TCAD to re-apply Gouy-Chapman-Stern model as ISFET sensing membrane to investigate its impact on sensitivity and stability of conventional ISFET. Sio2 material and high-k Ta2O5 material have been examined based on Gouy-Chapman and Gouy-Chapman-Stern models. Results shows that the ISFET sensitivity of SiO2 sensing membrane is improved from ~38 mV/pH to ~51 mV/pH and the VTH shift stability is also improved. Additionally, the results indicate that the sensitivity of Ta2O5 is 59.03 mV/pH that hit the Nearnst Limit 59.3 mV/pH and achieves good agreements with mathematical model and previous experimental results. In conclusion, this investigation introduces a real validation of previous mathematical models using commercial TCAD approach rather than expensive fabrication that paves the way for further analysis and optimization.