Obtaining The Ni80Fe20 Thin Film Smoothness Through The Capasitance Value Of Film In The R-C Serial Device
| Main Author: | Toifur, Moh. |
|---|---|
| Format: | Article NonPeerReviewed Book |
| Bahasa: | eng |
| Terbitan: |
Master of Education Policy and Development Postgraduate Muhammadiyah University of Malang-Indonesia
, 2013
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| Subjects: | |
| Online Access: |
http://eprints.uad.ac.id/18924/1/C%2031%202013%20toifur-smoothing%20curve.pdf http://eprints.uad.ac.id/18924/ http://www.pasca-pfisika.uad.ac.id |
Daftar Isi:
- Capacitive properties of Ni80Fe20 thin film as the result of sputtering on the various deposition field (Bdep) from 0 up to 600 G was reached. The aim of the research is to determine the smoothness of film with investigating the capacitance due to film porosities, and the performance of film as low pass filter. Device constitute of the resistor R = 769.9 serially connected with a film. Device was supplied with AC voltage from AFG. Investigating the capacitive properties was done on the 100 kHz frequency, while investigating the cut-off frequency was done in the range of 100 up to 1000 kHz. The output and input voltage were investigated through oscilloscope. From investigating the capacitive properties show that all samples display capacitive properties. The lowest capacitance according to the sample resulted from deposition on the Bdep of 300 G that is 0.09 pF, which is show the smoothest film compared with others. Key words: capacitance, sputtering