Investigation and design of ion-implanted MOSFET based on (18 nm) channel length
| Main Authors: | Abdul-kadir, Firas Natheer; University of Mosul, Mohammad, Khalid khaleel; Ninevah University, Hashim, Yasir; Tishk International University |
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| Format: | Article info application/pdf eJournal |
| Bahasa: | eng |
| Terbitan: |
Universitas Ahmad Dahlan
, 2020
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| Subjects: | |
| Online Access: |
http://journal.uad.ac.id/index.php/TELKOMNIKA/article/view/15958 http://journal.uad.ac.id/index.php/TELKOMNIKA/article/view/15958/9055 |
Daftar Isi:
- The aim of this study is to invistgate the characteristics of Si-MOSFET with 18 nm length of ion implemented channel. Technology computer aided design (TCAD) tool from Silvaco was used to simulate the MOSFET’s designed structure in this research. The results indicate that the MOSFET with 18 nm channel length has cut-off frequency of 548 GHz and transconductance of 967 μS, which are the most important factors in calculating the efficiency and improving the performance of the device. Also, it has threshold voltage of (-0.17 V) in addition obtaining a relatively small DIBL (55.11 mV/V). The subthreshold slope was in high value of 307.5 mV/dec. and this is one of the undesirable factors for the device results by short channel effect, but it does not reduce its performance and efficiency in general.