Lokasi: Leakage Immune 9T-SRAM Cell in Sub-threshold Region

Main Authors:	Gupta, Priya; Department of Electrical and Electronics Engineering Birla Institute of Technology and Science (BITS), Pilani, Rajasthan, Gupta, Anu; Department of Electrical and Electronics Engineering Birla Institute of Technology and Science (BITS), Pilani, Rajasthan, Asati, Abhijit; Department of Electrical and Electronics Engineering Birla Institute of Technology and Science (BITS), Pilani, Rajasthan
Format:	Article info application/pdf eJournal
Bahasa:	eng
Terbitan:	Institute of Advanced Engineering and Science , 2016
Subjects:	Low power SRAM Process variations Sub-threshold SRAM Static noise margin Stability
Online Access:	http://journal.portalgaruda.org/index.php/EEI/article/view/557 http://journal.portalgaruda.org/index.php/EEI/article/view/557/394

Koleksi	Bulletin of Electrical Engineering and Informatics
Gedung	IAES Indonesia Section and Partners
Institusi	IAES Indonesia Section and Partners
Kota	KOTA YOGYAKARTA
Provinsi	DAERAH ISTIMEWA YOGYAKARTA
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