Lokasi: Epitaxy of GaN Film by Hydrogen Plasma Assisted MOCVD

Main Authors:	Sugianto, Sugianto; Department of Physics, Universitas Negeri Semarang, Subagio, A.; Laboratory of Electronic Material Physics, Department of Physics, Bandung Institute of Technology, Jl. Ganesha 10 Bandung 40132, Erzam, Erzam; Laboratory of Electronic Material Physics, Department of Physics, Bandung Institute of Technology, Jl. Ganesha 10 Bandung 40132, Sani, R.A.; Laboratory of Electronic Material Physics, Department of Physics, Bandung Institute of Technology, Jl. Ganesha 10 Bandung 40132, Budiman, M.; Laboratory of Electronic Material Physics, Department of Physics, Bandung Institute of Technology, Jl. Ganesha 10 Bandung 40132, Arifin, P.; Laboratory of Electronic Material Physics, Department of Physics, Bandung Institute of Technology, Jl. Ganesha 10 Bandung 40132, Barmawi, M.; Laboratory of Electronic Material Physics, Department of Physics, Bandung Institute of Technology, Jl. Ganesha 10 Bandung 40132
Other Authors:	The HTTP Program of URGE Project, The Ministry of National Education, The Republic of Indonesia
Format:	Article info application/pdf eJournal
Bahasa:	eng
Terbitan:	ITB Journal Publisher, LPPM ITB , 2019
Subjects:	Physics GaN plasma-assisted MOCVD buffer layer hydrogen plasma single orientation MOCVD berbantuan plasma lapisan penyangga plasma hidrogen orientasi tunggal
Online Access:	http://journals.itb.ac.id/index.php/jmfs/article/view/9238 http://journals.itb.ac.id/index.php/jmfs/article/view/9238/3494

Koleksi	Journal of Mathematical and Fundamental Sciences
Gedung	Perpustakaan Institut Teknologi Bandung
Institusi	Institut Teknologi Bandung
Kota	KOTA BANDUNG
Provinsi	JAWA BARAT
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