Lokasi: Effect of Growth Temperature and Mn Incorporation on GaN:Mn Thin Films Grown by Plasma-Assisted MOCVD

Main Authors:	Mulyanti, Budi; 1Department of Electrical Engineering Education, Universitas Pendidikan Indonesia (UPI), Bandung, Subagio, A.; 2Laboratory of Electronic Material Physics, Faculty of Mathematics and Natural Sciences, Institute of Technology Bandung (ITB), Bandung 3Department of Physics, Diponegoro University (Undip), Semarang, Arsyad, F. S.; 4Department of Physics, Sriwijaya University (Unsri), Palembang, Arifin, P.; 2Laboratory of Electronic Material Physics, Faculty of Mathematics and Natural Sciences, Institute of Technology Bandung (ITB), Bandung, Barmawi, M.; 2Laboratory of Electronic Material Physics, Faculty of Mathematics and Natural Sciences, Institute of Technology Bandung (ITB), Bandung, Irzaman, Irzaman; 5Department of Physics, Institut Pertanian Bogor (IPB), Bogor, Jamal, Z.; 6School of Microelectronics, KUKUM, Perlis, Malaysia, Hashim, U.; 6School of Microelectronics, KUKUM, Perlis, Malaysia
Format:	Article info application/pdf eJournal
Bahasa:	eng
Terbitan:	ITB Journal Publisher, LPPM ITB , 2013
Subjects:	GaN:Mn PA-MOCVD EDX XRD AFM SEM
Online Access:	http://journals.itb.ac.id/index.php/jmfs/article/view/36 http://journals.itb.ac.id/index.php/jmfs/article/view/36/32

Koleksi	Journal of Mathematical and Fundamental Sciences
Gedung	Perpustakaan Institut Teknologi Bandung
Institusi	Institut Teknologi Bandung
Kota	KOTA BANDUNG
Provinsi	JAWA BARAT
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