COMSOL Model of a Three-Gate Junctionless Transistor
| Main Authors: | Rusev, Rostislav, Angelov, George, Ruskova, Ivelina, Gieva, Elitsa, Nikolov, Dimitar, Spasova, Mariya, Hristov, Marin, Radonov, Rosen |
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| Format: | Proceeding Journal |
| Terbitan: |
, 2021
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| Subjects: | |
| Online Access: |
https://zenodo.org/record/5601496 |
Daftar Isi:
- A 3D model of silicon three gate nanowire junctionless transistor is developed in COMSOL Multiphysics. It is based on Gummel approach with Green's functions. The model describes output I-V characteristics. Modeling results are verified against reference experimental data with average accuracy of 11%. Simulation of gate materials with different work functions that are used in practice is performed. The charge distribution along the nanowire depending on gate length is also studied.
- DOI: 10.1109/MIEL52794.2021.9569053