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Effects of Variation of Quantum Well Numbers on Gain Characteristics of Type-I InGaAsP/InP Nano-heterostructure

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Main Authors: S. G. Anjum, Sandhya K., A. B. Khan, A. M. Khan, M. J. Siddiqui, P. A. Alvi
Format: Article
Terbitan: , 2017
Subjects:
optical gain
nano-heterostructure
Semiconductor laser
quantum well laser
InGaAsP
InP
Online Access: https://zenodo.org/record/4106286
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Internet

https://zenodo.org/record/4106286

Lihat Juga

  • Effects of Variation of Quantum Well Numbers on Gain Characteristics of Type-I InGaAsP/InP Nano-heterostructure
    oleh: Anjum, S. G.; Muslim University, et al.
    Terbitan: (2017)
  • A Comparative Study on Optical Characteristics of InGaAsP QW Heterostructures of Type-I and Type-II Band Alignments
    oleh: Garima Bhardwaj, et al.
    Terbitan: (2018)
  • A Comparative Study on Optical Characteristics of InGaAsP QW Heterostructures of Type-I and Type-II Band Alignments
    oleh: Bhardwaj, Garima; Banasthali University, et al.
    Terbitan: (2018)
  • Characterization of InGaAsP/InP Quantum Well Lasers
    oleh: K. Melouk, et al.
    Terbitan: (2015)
  • Comparison of semiconductor lasers at wavelength 980 nm and 1480 nm using InGaAs for EDFA pumping scheme
    oleh: Satyo Pradana, et al.
    Terbitan: (2019)
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