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Low temperature inorganic chemical vapor deposition of Ti–Si–N diffusion barrier liners for gigascale copper interconnect applications

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Main Authors: Eisenbraun, Eric, Kaloyeros, Alain E, Arkles, Barry
Format: Article
Bahasa: eng
Terbitan: , 2000
Subjects:
Titanium Nitride
Diffusion Barriers
Chemical Vapor Deposition
Online Access: https://zenodo.org/record/3969062
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Internet

https://zenodo.org/record/3969062

Lihat Juga

  • Low temperature inorganic chemical vapor deposition of Ti–Si–N diffusion barrier liners for gigascale copper interconnect applications
    oleh: Eisenbraun, Eric, et al.
    Terbitan: (2007)
  • Low Temperature In-Situ Sequential Chemical Vapor Deposition of Ti:TiN Ultrathin Bilayers for ULSI Barrier Applications
    oleh: Goldberg, Cindy, et al.
    Terbitan: (1995)
  • Low temperature metal-organic chemical vapor deposition of tungsten nitride as a diffusion barrier for copper
    oleh: Kelsey, Jean E, et al.
    Terbitan: (1999)
  • Plasma-Assisted Chemical Vapor Deposition of Gold for ULSI Multilevel Metallization Schemes
    oleh: Lou, Ishing, et al.
    Terbitan: (1994)
  • Silicon Nitride Films Deposited by Atmospheric Pressure Chemical Vapor Deposition
    oleh: Lin, Xian, et al.
    Terbitan: (1998)
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