Raw data set: One-Step Fabrication of GeSn Branched Nanowires

Main Authors: Subhajit Biswas, Justin Holmes
Format: info dataset
Terbitan: , 2019
Online Access: https://zenodo.org/record/3247478
Daftar Isi:
  • This is the raw data set for the publication titled " One-Step Fabrication of GeSn Branched Nanowires" in the journal Chemistry of Materials (Chem. Mater.201931114016-4024). Below is the abstract of the publicaiton. Abstract: We report for the first time the self-catalysed, single step growth of branched GeSn nanostructures by a catalytic vapour-liquid-solid (VLS) mechanism. These typical GeSn nanostructures consist of <111> oriented Sn rich (~8 at. %) GeSn “branches” grown epitaxially on GeSn “trunks”, with a Sn content of ~ 4 at. %. The trunks are seeded from Au0.80Ag0.20 nanoparticles followed by the catalytic growth of secondary branches (diameter ~ 50 nm) from the excess of Sn on the sidewalls of the trunks, as determined by high resolution electron microscopy and energy dispersive X-ray (EDX) analysis. The nanowires, with <111> directed GeSn branches oriented at ~ 70 ° to the trunks, have no apparent defects or change in crystal structure at the trunk-branch interface; structural quality is retained at the interface with epitaxial crystallographic relation. Electrochemical performance of these highly ordered GeSn nanostructures were explored as a potential anode material for Li-ion batteries, due to their high surface to volume ratio and increased charge carrier pathways. The unique structure of branched nanowires led to high specific capacities comparable to, or greater than, conventional Ge nanowire anode materials and Ge1-x­Snx­ nanocrystals.We report for the first time the self-catalysed, single step growth of branched GeSn nanostructures by a catalytic vapour-liquid-solid (VLS) mechanism. These typical GeSn nanostructures consist of <111> oriented Sn rich (~8 at. %) GeSn “branches” grown epitaxially on GeSn “trunks”, with a Sn content of ~ 4 at. %. The trunks are seeded from Au0.80Ag0.20 nanoparticles followed by the catalytic growth of secondary branches (diameter ~ 50 nm) from the excess of Sn on the sidewalls of the trunks, as determined by high resolution electron microscopy and energy dispersive X-ray (EDX) analysis. The nanowires, with <111> directed GeSn branches oriented at ~ 70 ° to the trunks, have no apparent defects or change in crystal structure at the trunk-branch interface; structural quality is retained at the interface with epitaxial crystallographic relation. Electrochemical performance of these highly ordered GeSn nanostructures were explored as a potential anode material for Li-ion batteries, due to their high surface to volume ratio and increased charge carrier pathways. The unique structure of branched nanowires led to high specific capacities comparable to, or greater than, conventional Ge nanowire anode materials and Ge1-x­Snx­ nanocrystals.