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Employing Si solar cell technology to increase efficiency of ultra-thin Cu(In,Ga)Se2 solar cells

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Main Author: Bart Vermang, Jörn Timo Wätjen, Viktor Fjällström, Fredrik Rostvall, Marika Edoff, Ratan Kotipalli, Frederic Henry, and Denis Flandre
Format: Article
Terbitan: , 2014
Subjects:
Si; PERC; Cu(In
Ga)Se2; thin; Al2O3; surface passivation layer; nano-sized point contact openings; rear surface recombination velocity; rear internal reflection
Online Access: https://zenodo.org/record/2530814
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Internet

https://zenodo.org/record/2530814

Lihat Juga

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    Terbitan: (2017)
  • Dielectric-Based Rear Surface Passivation Approaches for Cu(In,Ga)Se2 Solar Cells—A Review
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