Indonesia OneSearch
Gravitasi
  • Cari
  • Impact of Interface Fixed Char...
  • Lokasi
Cover Image

Impact of Interface Fixed Charges on the Performance of the Channel Material Engineered Cylindrical Nanowire MOSFET

Tersimpan di:
Main Authors: Rajni Gautam, Manoj Saxena, R.S.Gupta, Mridula Gupta
Format: Article
Terbitan: , 2011
Subjects:
ATLAS-3D
channel length modulation
fixed Charges
hot carrier effect
interface traps
nanowire MOSFET
Online Access: https://zenodo.org/record/1309297
  • Lokasi
  • Deskripsi
  • Daftar Isi
  • Preview
  • Tampilan Petugas

Internet

https://zenodo.org/record/1309297

Lihat Juga

  • Analytical Modeling of Channel Noise for Gate Material Engineered Surrounded/Cylindrical Gate (SGT/CGT) MOSFET
    oleh: Pujarini Ghosh A, et al.
    Terbitan: (2010)
  • The variability of the surface scattering coulombian mobility in dielectric interface of Si-Nanowire GAA-MOSFET at 20 nm Length channel
    oleh: Abderrezak Bekaddour, et al.
    Terbitan: (2020)
  • Improvement of Short Channel Effects in Cylindrical Strained Silicon Nanowire Transistor
    oleh: Fatemeh Karimi, et al.
    Terbitan: (2010)
  • Effects of interface-trapped charge on the SiC MOSFET characteristics
    oleh: Scozzi, C. J., et al.
    Terbitan: (1970)
  • Fabrikasi dan karakterisasi vertical n-channel metal oxide semiconductor field effect transistor (VN-MOSFET)
    oleh: HAFID, M. Jahiding A.
    Terbitan: (1999)
© 2025 Perpustakaan Nasional Republik Indonesia
Loading...