Lihat Juga

• Figure 3: The dependencies 2 00 (log !¿3⁄4). The values are normalized at 2 00 max-TOWARD THE PHYSICAL BASIS OF COMPLEX SYSTEMS: DIELECTRIC ANALYSIS OF POROUS SILICON NANOCHANNELS IN THE ELECTRICAL DOUBLE LAYER LENGTH RANGE
  oleh: Ana Ioanid, et al.
  Terbitan: (2010)
• Figure 2: The dependencies 2 0 (log !¿3⁄4). The values are normalized at 2 0 max-TOWARD THE PHYSICAL BASIS OF COMPLEX SYSTEMS: DIELECTRIC ANALYSIS OF POROUS SILICON NANOCHANNELS IN THE ELECTRICAL DOUBLE LAYER LENGTH RANGE
  oleh: Ana Ioanid, et al.
  Terbitan: (2010)
• Figure 1: EDL structure for p-Si-TOWARD THE PHYSICAL BASIS OF COMPLEX SYSTEMS: DIELECTRIC ANALYSIS OF POROUS SILICON NANOCHANNELS IN THE ELECTRICAL DOUBLE LAYER LENGTH RANGE
  oleh: Ana Ioanid, et al.
  Terbitan: (2010)
• Investigation of dielectric constant of single layer MoS2 in visible light range based on Drude-Lorentz-Gaussian model
  oleh: n.ansari, et al.
  Terbitan: (2015)
• Koleksi hadis-hadis 4
  oleh: T. M. Hasbi Ash-Shidieqy
  Terbitan: (1994)