A. Tossin , A. (2015). PENGARUH PROFILE GRADED HBT SiGe (Hetero Junction Bipolar Transistor Silicon- Germanium) TERHADAP NILAI PARAMETER SCATTERING. Politeknik Negeri Sriwijaya.
Chicago Style CitationA. Tossin , Alamsyah. PENGARUH PROFILE GRADED HBT SiGe (Hetero Junction Bipolar Transistor Silicon- Germanium) TERHADAP NILAI PARAMETER SCATTERING. Politeknik Negeri Sriwijaya, 2015.
MLA CitationA. Tossin , Alamsyah. PENGARUH PROFILE GRADED HBT SiGe (Hetero Junction Bipolar Transistor Silicon- Germanium) TERHADAP NILAI PARAMETER SCATTERING. Politeknik Negeri Sriwijaya, 2015.
Warning: These citations may not always be 100% accurate.